Static Noise Margin Analysis of SRAM Cell for High Speed Application
نویسنده
چکیده
This paper presents the different types of analysis such as noise, voltage, read margin and write margin of Static Random Access Memory (SRAM) cell for high-speed application. The design is based upon the 0.18 μm CMOS process technology. Static Noise Margin (SNM) is the most important parameter for memory design. SNM, which affects both read and write margin, is related to the threshold voltages of the NMOS and PMOS devices of the SRAM cell that is why we have analyzed SNM with the Read Margin, Write Margin and also the Threshold voltage. For demand of the high-speed application of the SRAM cell operation, supply voltage scaling is often used that is why we have done Data Retention Voltage. We took different types of curve by which straightforwardly we could analyses the size of the transistor of the SRAM cell for high-speed application.
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